IRFPG40 Datasheet, PDF (1/8 Pages) Intersil Corporation – 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET

Power MOSFET
IRFPG40, SiHFPG40
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
1000
V_GS = 10 V
3.5
120
16
65
Single
D
TO-247
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mouting hole.
It also provides greater creepage distance between pins to
meet the requirements of most safety specifications.
TO-247
IRFPG40PbF
SiHFPG40-E3
IRFPG40
SiHFPG40
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
Pulsed Drain Current^a
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Linear Derating Factor
Single Pulse Avalanche Energy^b
E_AS
Repetitive Avalanche Current^a
I_AR
Repetitive Avalanche Energy^a
E_AR
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
T_C = 25 °C
P_D
dV/dt
Operating Junction and Storage Temperature Range
T_J, T_stg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 50 V, starting T_J = 25 °C, L = 50 mH, R_G = 25 Ω, I_AS = 4.3 A (see fig. 12).
c. I_SD ≤ 4.3 A, dI/dt ≤ 100 A/µs, V_DD ≤ 600, T_J ≤ 150 °C.
d. 1.6 mm from case
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
1000
± 20
4.3
2.7
17
1.2
490
4.3
15
150
1.0
- 55 to + 150
300^d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Document Number: 91253
S-81368-Rev. A, 21-Jul-08
www.vishay.com
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