IRFP448 Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET POWER MOSFET

Power MOSFET
IRFP448, SiHFP448
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
500
V_GS = 10 V
84
8.4
50
Single
0.60
D
TO-247
S
D
G
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third Generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole. It also provides greater creepage distance between
pins to meet the requirements of most safety specifications.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-247
IRFP448PbF
SiHFP448-E3
IRFP448
SiHFP448
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
V_DS
V_GS
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
T_C = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 50 V, starting T_J = 25 °C, L = 8.2 mH, R_G = 25 Ω, I_AS = 11 A (see fig. 12).
c. I_SD ≤ 11 A, dI/dt ≤ 120 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
500
± 20
11
6.6
44
1.4
550
11
18
180
3.5
- 55 to + 150
300^d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Document Number: 91229
S-Pending-Rev. A, 26-Jun-08
WORK-IN-PROGRESS
www.vishay.com
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