IRFL9110 Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-1.1A)

Power MOSFET
IRFL9110, SiHFL9110
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
- 100
R_DS(on) (Ω)
V_GS = - 10 V
1.2
Q_g (Max.) (nC)
8.7
Q_gs (nC)
2.2
Q_gd (nC)
4.1
Configuration
Single
S
G
SOT-223
D
P-Channel MOSFET
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mount using
vapor phase, infrared, or wave soldering techniques. Its
unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance due
to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
SOT-223
IRFL9110PbF
SiHFL9110-E3
IRFL9110
SiHFL9110
SOT-223
IRFL9110TRPbF^a
SiHFL210T-E3^a
IRFL9110TR^a
SiHFL9110T^a
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
V_DS
V_GS
V_GS at - 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Linear Derating Factor (PCB Mount)^e
Single Pulse Avalanche Energy^b
Avalanche Current^a
Peak Diode Recovery dV/dt^c
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)^e
Peak Diode Recovery dV/dt^c
T_C = 25 °C
T_A = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = - 25 V, starting T_J = 25 °C, L = 7.7 mH, R_G = 25 Ω, I_AS = - 4.4 A (see fig. 12).
c. I_SD ≤ - 4.4 A, dI/dt ≤ - 75 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
- 100
± 20
- 1.1
- 0.69
- 8.8
0.025
0.017
100
- 1.1
0.31
3.1
2.0
- 5.5
- 55 to + 150
300^d
Document Number: 91196
S-81369-Rev. A, 07-Jul-08
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
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