IRFL210 Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.96A)

Power MOSFET
IRFL210, SiHFL210
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
200
V_GS = 10 V
1.5
8.2
1.8
4.5
Single
D
SOT-223
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
SOT-223
IRFL210PbF
SiHFL210-E3
IRFL210
SiHFL210
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performace due to
an enlarged tab for heatsinking. Power dissipation of greater
than 1.25 W is possible in a typical surface mount
application.
SOT-223
IRFL210TRPbF^a
SiHFL210T-E3^a
IRFL210TR^a
SiHFL210T^a
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
Pulsed Drain Current^a
T_C = 25 °C
V_GS at 10 V
I_D
T_C = 100 °C
I_DM
Linear Derating Factor
Linear Derating Factor (PCB Mount)^e
Single Pulse Avalanche Energy^b
E_AS
Repetitive Avalanche Current^a
I_AR
Repetitive Avalanche Energy^a
E_AR
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
200
± 20
0.96
0.6
7.7
0.025
0.017
50
0.96
0.31
UNIT
V
A
W/°C
mJ
A
mJ
Document Number: 91193
S-81377-Rev. A, 30-Jun-08
www.vishay.com
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