IRFL110 Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)

Power MOSFET
IRFL110, SiHFL110
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
100
V_GS = 10 V
8.3
2.3
3.8
Single
0.54
D
SOT-223
G
S
N-Channel MOSFET
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance due
to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
SOT-223
IRFL110PbF
SiHFL110-E3
IRFL110
SiHFL110
SOT-223
IRFL110TRPbF^a
SiHFL110T-E3^a
IRFL110TR^a
SiHFL110T^a
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
Linear Derating Factor (PCB Mount)^e
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)^e
Peak Diode Recovery dV/dt^c
V_DS
V_GS
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
T_C = 25 °C
T_A = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 25 V, starting T_J = 25 °C, L = 25 mH, R_G = 25 Ω, I_AS = 3.0 A (see fig. 12).
c. I_SD ≤ 5.6 A, dI/dt ≤ 75 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
100
± 20
1.5
0.96
12
0.025
0.017
150
1.5
0.31
3.1
2.0
5.5
- 55 to + 150
300^d
* Pb containing terminations are not RoHS compliant, exemptions may apply
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Document Number: 91192
S-81361-Rev. A, 07-Jul-08
www.vishay.com
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