IRFL014_10 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Power MOSFET

Power MOSFET
IRFL014, SiHFL014
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
60
V_GS = 10 V
11
3.1
5.8
Single
0.20
D
SOT-223
D
S
D
G
G
S
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performace
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
Note
a. See device orientation.
SOT-223
SiHFL014-GE3
IRFL014PbF
SiHFL014-E3
IRFL014
SiHFL014
SOT-223
SiHFL014TR-GE3^a
IRFL014TRPbF^a
SiHFL014T-E3^a
IRFL014TR^a
SiHFL014T^a
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
V_DS
V_GS
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Linear Derating Factor (PCB Mount)^e
Single Pulse Avalanche Energy^b
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)^e
Peak Diode Recovery dV/dt^c
T_C = 25 °C
T_A = 25 °C
E_AS
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 25 V, starting T_J = 25 °C, L = 16 mH, R_g = 25 Ω, I_AS = 2.7 A (see fig. 12).
c. I_SD ≤ 10 A, dI/dt ≤ 90 A/μs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
60
± 20
2.7
1.7
22
0.025
0.017
100
3.1
2.0
4.5
- 55 to + 150
300^d
UNIT
V
A
W/°C
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91191
S10-1257-Rev. C, 31-May-10
www.vishay.com
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