IRFIB7N50L Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

IRFIB7N50L, SiHFIB7N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
500
V_GS = 10 V
92
24
44
Single
0.320
TO-220 FULLPAK
D
G
GDS
ORDERING INFORMATION
Package
Lead (Pb)-free
S
N-Channel MOSFET
FEATURES
• Super Fast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
• Lower Gate Charge Results in Simpler Drive
Reqirements
RoHS
COMPLIANT
• Enhanced dV/dt Capabilities Offer Improved
Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
• Lead (Pb)-free
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control Applications
TO-220 FULLPAK
IRFIB7N50LPbF
SiHFIB7N50L-E3
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
V_GS at 10 V ^{TC = 25 °C}
I_D
T_C = 100 °C
I_DM
Single Pulse Avalanche Energy^b
E_AS
Avalanche Current^a
I_AR
Repetitive Avalanche Energy^a
E_AR
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
T_C = 25 °C
P_D
dV/dt
Operating Junction and Storage Temperature Range
T_J, T_stg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12).
b. Starting T_J = 25 °C, L = 24 mH, R_G = 25 Ω, I_AS = 6.8 A (see fig. 14).
c. I_SD ≤ 6.8 A, dI/dt ≤ 650 A/µs, V_DD ≤ V_DS, dV/dt = 24 V/ns, T_J ≤ 150 °C.
d. 1.6 mm from case.
LIMIT
500
± 30
6.8
4.3
27
0.37
550
6.8
4.6
46
24
- 55 to + 150
300^d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Document Number: 91177
S-Pending-Rev. A, 24-Jun-08
WORK-IN-PROGRESS
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