IRFIB7N50A Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A)

IRFIB7N50A, SiHFIB7N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
500
V_GS = 10 V
52
13
18
Single
0.52
TO-220 FULLPAK
D
G
GDS
S
N-Channel MOSFET
FEATURES
• Low Gate Charge Q_g Results in Simple Drive
Requirement
Available
• Improved Gate, Avalanche and Dynamic dV/dt _RoHS*
Ruggedness
COMPLIANT
• Fully Characterized Capacitance and
Avalanche Voltage and Current
• Effective C_oss Specified
• Compliant to RoHS directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• High Voltage Isolation = 2.5 kV_RMS (t = 60 s, f = 60 Hz)
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half and Full Bridge Convertors
• Power Factor Correction Boost
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220 FULLPAK
IRFIB7N50APbF
SiHFIB7N50A-E3
IRFIB7N50A
SiHFIB7N50A
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^f
Continuous Drain Current
Pulsed Drain Current^{a, e}
Linear Derating Factor
Single Pulse Avalanche Energy^{b, e}
Repetitive Avalanche Current^{a, e}
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt^{c, e}
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
T_C = 25 °C
V_DS
V_GS
I_D
I_DM
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T_J = 25 °C, L = 4.5 mH, R_G = 25 Ω, I_AS = 11 A (see fig. 12).
c. I_SD ≤ 11 A, dI/dt ≤ 140 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
e. Uses IRFB11N50A, SiHFB11N50A data and test conditions.
f. Drain current limited by maximum junction temperature.
LIMIT
500
± 30
6.6
4.2
44
0.48
275
11
6.0
60
6.9
- 55 to + 150
300^d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91176
S09-0517-Rev. B, 13-Apr-09
www.vishay.com
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