IRFIB6N60A Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)max=0.75ohm, Id=5.5A)

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IRFIB6N60A, SiHFIB6N60A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
Q_g max. (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
600
V_GS = 10 V
49
13
20
Single
0.75
TO-220 FULLPAK
D
G
GDS
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low gate charge Q_g results in simple drive
requirement
• Improved gate, avalanche and dynamic dV/dt
ruggedness
Available
Available
• Fully characterized capacitance and avalanche
voltage and current
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
APPLICATIONS
• Switch mode power supply (SMPS)
• Uninterruptible power supply
• High speed power switching
• High voltage isolation = 2.5 kV_RMS (t = 60 s, f = 60 Hz)
TYPICAL SMPS TOPOLOGIES
• Single transistor forward
• Active clamped forward
TO-220 FULLPAK
IRFIB6N60APbF
SiHFIB6N60A-E3
IRFIB6N60A
SiHFIB6N60A
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^a
Linear Derating Factor
V_DS
V_GS
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Single Pulse Avalanche Energy ^b
Repetitive Avalanche Current ^a
Repetitive Avalanche Energy ^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt ^c
T_C = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) ^d
for 10 s
T_J, T_stg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T_J = 25 °C, L = 6.8 mH, R_G = 25 , I_AS = 9.2 A (see fig. 12).
c. I_SD  9.2 A, dI/dt  50 A/μs, V_DD  V_DS, T_J  150 °C.
d. 1.6 mm from case.
LIMIT
600
± 30
5.5
3.5
37
0.48
290
9.2
6.0
60
5.0
-55 to +150
300
10
1.1
UNIT
V
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
S16-0763-Rev. D, 02-May-16
1
Document Number: 91175
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000