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IRFIB5N50L Datasheet, PDF (1/8 Pages) International Rectifier – MOTOR Control Application | |||
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IRFIB5N50L, SiHFIB5N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
45
13
23
Single
0.67
TO-220 FULLPAK
D
G
GDS
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
FEATURES
⢠Super Fast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
⢠Lower Gate Charge Results in Simpler Drive
Reqirements
RoHS
COMPLIANT
⢠Enhanced dV/dt Capabilities Offer Improved Ruggedness
⢠Higher Gate Voltage Threshold Offers Improved Noise
Immunity
⢠Lead (Pb)-free
APPLICATIONS
⢠Zero Voltage Switching SMPS
⢠Telecom and Server Power Supplies
⢠Uninterruptible Power Supplies
⢠Motor Control Applications
TO-220 FULLPAK
IRFIB5N50LPbF
SiHFIB5N50L-E3
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 18 mH, RG = 25 Ω, IAS = 4.0 A, dV/dt = 13 V/ns, (see fig. 12).
c. ISD ⤠4.0 A, dI/dt ⤠280 A/µs, VDD ⤠VDS, TJ ⤠150 °C.
d. 1.6 mm from case.
LIMIT
500
± 30
4.7
3.0
16
0.33
140
4.0
3.0
42
13
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Document Number: 91173
S-Pending-Rev. A, 24-Jun-08
WORK-IN-PROGRESS
www.vishay.com
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