IRFI840GLC Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=4.5A)

IRFI840GLC, SiHFI840GLC
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
500
V_GS = 10 V
39
10
19
Single
0.85
TO-220 FULLPAK
D
G
GDS
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
Available
• Enhanced 30 V V_GS Rating
• Isolated Package
RoHS*
COMPLIANT
• High Voltage Isolation = 2.5 kV_RMS (t = 60 s; f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• Repetitve Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over conventional MOSFETs.
Utilizing advanced Power MOSFET technology, the device
improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings.
These device improvements combined with the proven
ruggedness and reliability that are characteristic of
MOSFETs offer the designer a new standard in power
transistors for switching applications.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware. The molding compound used provides
a high isolation capability and low thermal resistance
between the tab and external heatsink.
TO-220 FULLPAK
IRFI840GLCPbF
SiHFI840GLC-E3
IRFI840GLC
SiHFI840GLC
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
V_DS
V_GS
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
T_C = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 50 V, starting T_J = 25 °C, L = 26 mH, R_G = 25 Ω, I_AS = 4.5 A (see fig. 12).
c. I_SD ≤ 8.0 A, dI/dt ≤ 100 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91160
S-81292-Rev. A, 16-Jun-08
LIMIT
500
± 30
4.5
2.9
18
0.32
300
4.5
4.0
40
3.5
- 55 to + 150
300^d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
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