IRFD9020 Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET TRANSISTORS P CHANNEL HEXDIP

Power MOSFET
IRFD9020, SiHFD9020
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
- 60
V_GS = - 10 V
19
5.4
11
Single
0.28
HEXDIP
S
G
D
S
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dv/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• P-Channel
• 175 °C Opertaing Temperature
• Fast Switching
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provides the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost
effectiveness.
The 4 pin DIP package is a low cost machine-insertable case
style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up to
1 W.
HEXDIP
IRFD9020PbF
SiHFD9020-E3
IRFD9020
SiHFD9020
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Gate-Source Voltage
V_GS
Continuous Drain Current
T_C = 25 °C
V_GS at - 10 V
I_D
T_C = 100 °C
Pulsed Drain Current^a
I_DM
Linear Derating Factor
Single Pulse Avalanche Energy^b
E_AS
Repetitive Avalanche Current^a
I_AR
Repetitive Avalanche Energy^a
E_AR
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
T_C = 25 °C
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = - 25 V, starting T_J = 25 °C, L = 15 mH, R_G = 25 Ω, I_AS = - 3.2 A (see fig. 12).
c. I_SD ≤ - 11 A, dI/dt ≤ - 140 A/μs, V_DD ≤ V_DS, T_J ≤ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90170
S-81412-Rev. A, 07-Jul-08
LIMIT
± 20
- 1.6
- 1.1
- 13
0.0083
140
- 1.6
0.13
1.3
- 4.5
- 55 to + 175
300^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
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