IRFD9010 Datasheet, PDF (1/7 Pages) International Rectifier – HEXFET® TRANSISTORS P-CHANNEL HEXDIP™

Power MOSFET
IRFD9010, SiHFD9010
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
- 50
V_GS = - 10 V
11
3.8
4.1
Single
0.50
HVMDIP
S
G
D
S
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• For Automatic Insertion
• Compact, End Stackable
• Fast Switching
• Low Drive Current
• Easy Paralleled
• Excellent Temperature Stability
• P-Channel Versatility
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The HVMDIP technology is the key to Vishay’s advanced
line of power MOSFET transistors. The efficient geometry
and unique processing of the HVMDIP design achieves
very low on-state resistance combined with high
transconductance and extreme device ruggedness.
The p-channel HVMDIPs are designed for application which
require the convenience of reverse polarity operation. They
retain all of the features of the more common n-channel
HVMDIPs such as voltage control, very fast switching, ease
of paralleling, and excellent temperature stability.
P-channels HVMDIPs are intended for use in power stages
where complementary symmetry with n-channel devices
offers circuit simplification. They are also very useful in drive
stages because of the circuit versatility offered by the
reverse polarity connection. Applications include motor
control, audio amplifiers, switched mode converters, control
circuits and pulse amplifiers.
HVMDIP
IRFD9010PbF
SiHFD9010-E3
IRFD9010
SiHFD9010
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
V_DS
V_GS
V_GS at - 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Inductive Current, Clamped
Inductive Current, Unclamped (Avalanche Current)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
L = 100 µH see fig. 14
see fig. 15
T_C = 25 °C
for 10 s
I_LM
I_L
P_D
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = - 25 V, starting T_J = 25 °C, L = 52 mH, R_g = 25 Ω, I_AS = - 2.0 A (see fig. 12).
c. I_SD ≤ - 4.0 A, dI/dt ≤ 75 A/μs, V_DD ≤ V_DS, T_J ≤ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91405
S10-0998-Rev. A, 26-Apr-10
LIMIT
- 50
± 20
- 1.1
- 0.68
- 8.8
0.01
- 8.8
- 1.5
1
- 55 to + 150
300^d
UNIT
V
A
W/°C
A
W
°C
www.vishay.com
1