IRFD224 Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=0.63A)

Power MOSFET
IRFD224, SiHFD224
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
250
V_GS = 10 V
1.1
14
2.7
7.8
Single
D
HEXDIP
S
G
D
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free
RoHS
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertiable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serveres as a
thermal link to the mounting surface for power dissipation
levels up to 1 W.
ORDERING INFORMATION
Package
Lead (Pb)-free
HEXDIP
IRFD224PbF
SiHFD224-E3
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
V_DS
V_GS
T_C = 25 °C
V_GS at 10 V
I_D
T_C = 100 °C
I_DM
Single Pulse Avalanche Energy^b
Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
T_C = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 50 V, starting T_J = 25 °C, L = 15 mH, R_G = 25 Ω, I_AS = 2.5 A (see fig. 12).
c. I_SD ≤ 4.4 A, dI/dt ≤ 90 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
LIMIT
250
± 20
0.63
0.40
5.0
0.0083
60
0.63
0.10
1.0
4.8
- 55 to + 150
300^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Document Number: 91132
S-Pending-Rev. A, 23-Jun-08
WORK-IN-PROGRESS
www.vishay.com
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