IRFD014 Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=1.7A)

Power MOSFET
IRFD014, SiHFD014
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
60
V_GS = 10 V
11
3.1
5.8
Single
0.20
D
HEXDIP
S
G
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case
style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up to
1 W.
HEXDIP
IRFD014PbF
SiHFD014-E3
IRFD014
SiHFD014
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
T_C = 25 °C
V_GS at 10 V
I_D
T_C = 100 °C
Pulsed Drain Current^a
I_DM
Linear Derating Factor
Single Pulse Avalanche Energy^b
E_AS
Maximum Power Dissipation
T_C = 25 °C
P_D
Peak Diode Recovery dV/dt^c
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 25 V, starting T_J = 25 °C, L = 52 mH, R_G = 25 Ω, I_AS = 1.7 A (see fig. 12).
c. I_SD ≤ 10 A, dI/dt ≤ 90 A/µs, V_DD ≤ V_DS, T_J ≤ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91125
S-81263-Rev. A, 21-Jul-08
LIMIT
60
± 20
1.7
1.2
14
0.0083
130
1.3
4.5
- 55 to + 175
300^d
UNIT
V
A
W/°C
mJ
W
V/ns
°C
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