IRFBC40AS Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)

IRFBC40AS, SiHFBC40AS
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
600
V_GS = 10 V
1.2
42
10
20
Single
D
D²PAK (TO-263)
GD
S
G
S
N-Channel MOSFET
FEATURES
• Low Gate Charge Q_g results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and
Avalanche Voltage and Current
• Effective C_oss Specified
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Forward
ORDERING INFORMATION
Package
D²PAK (TO-263)
Lead (Pb)-free
IRFBC40ASPbF
SiHFBC40AS-E3
SnPb
IRFBC40AS
SiHFBC40AS
Note
a. See device orientation.
D²PAK (TO-263)
IRFBC40ASTRLPbF^a
SiHFBC40ASTL-E3^a
IRFBC40ASTRL^a
SiHFBC40ASTL^a
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^e
Pulsed Drain Current^{a, e}
Linear Derating Factor
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt^{c, e}
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
T_C = 25 °C
V_DS
V_GS
I_D
I_DM
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T_J = 25 °C, L = 29.6 mH, R_G = 25 Ω, I_AS = 6.2 A (see fig. 12).
c. I_SD ≤ 6.2 A, dI/dt ≤ 88 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
e. Uses IRFBC40A/SiHFBC40A data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
D²PAK (TO-263)
IRFBC40ASTRRPbF^a
SiHFBC40ASTR-E3^a
IRFBC40ASTRR^a
SiHFBC40ASTR^a
LIMIT
600
± 30
6.2
3.9
25
1.0
570
6.2
13
125
6.0
- 55 to + 150
300^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Document Number: 91113
S-Pending-Rev. A, 23-Jun-08
WORK-IN-PROGRESS
www.vishay.com
1