IRF9Z24 Datasheet, PDF (1/8 Pages) International Rectifier – POWER MOSFET

Power MOSFET
IRF9Z24, SiHF9Z24
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
- 60
V_GS = - 10 V
19
5.4
11
Single
0.28
S
TO-220
G
S
D
G
D
P-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRF9Z24PbF
SiHF9Z24-E3
IRF9Z24
SiHF9Z24
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
V_GS
V_GS at - 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Linear Derating Factor
Single Pulse Avalanche Energy^b
E_AS
Repetitive Avalanche Current^a
I_AR
Repetitive Avalanche Energy^a
E_AR
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
T_C = 25 °C
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = - 25 V, starting T_J = 25 °C, L = 2.3 mH, R_G = 25 Ω, I_AS = - 11 A (see fig. 12).
c. I_SD ≤ - 11 A, dI/dt ≤ 140 A/µs, V_DD ≤ V_DS, T_J ≤ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
- 60
± 20
- 11
- 7.7
- 44
0.40
240
- 11
6.0
60
- 4.5
- 55 to + 175
300^d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Document Number: 91090
S-Pending-Rev. A, 20-Jun-08
WORK-IN-PROGRESS
www.vishay.com
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