IRF840LCS Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
500
V_GS = 10 V
39
10
19
Single
0.85
D
I²PAK
(TO-262)
D²PAK
(TO-263)
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V V_GS Rating
• Reduced C_iss, C_oss, C_rss
• Extremely High Frequency Operation
• Repetitive Avalanche Rated
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge then conventional Power
MOSFETs. Utilizing the new LCDMOS (low charge device
Power MOSFETs) technology, the device improvements are
achieved without added product cost, allowing for reduced
gate drive requirements and total system savings. In
addition, reduced switching losses and improved efficiency
are achievable in a variety of high frequency applications.
Frequencies of a few MHz at high current are possible using
the new low charge Power MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that characterize Power
MOSFETs offer the designer a new power transistor
standard for switching applications.
ORDERING INFORMATION
Package
D²PAK (TO-263)
Lead (Pb)-free
IRF840LCSPbF
SiHF840LCS-E3
SnPb
Note
a. See device orientation.
IRF840LCS
SiHF840LCS
D²PAK (TO-263)
-
-
IRF840LCSTRR^a
SiHF840LCST^a
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^{a, e}
Linear Derating Factor
Single Pulse Avalanche Energy^{b, e}
Avalanche Current^a
Repetiitive Avalanche Energy^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt^{c, e}
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
T_C = 25 °C
T_A = 25 °C
V_DS
V_GS
I_D
I_DM
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T_J = 25 °C, L = 14 mH, R_G = 25 Ω, I_AS = 8.0 A (see fig. 12).
c. I_SD ≤ 8.0 A, dI/dt ≤ 100 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
e. Uses IRF840LC/SiHF840LC data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
I²PAK (TO-262)
IRF840LCLPbF
SiHF840LCL-E3
IRF840LCL
SiHF840LCL
LIMIT
500
± 30
8.0
5.1
28
1.0
510
8.0
13
3.1
125
3.5
- 55 to + 150
300^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Document Number: 91068
S-Pending-Rev. A, 02-Jun-08
WORK-IN-PROGRESS
www.vishay.com
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