IRF740A Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

Power MOSFET
IRF740A, SiHF740A
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
400
V_GS = 10 V
36
9.9
16
Single
0.55
D
TO-220
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Q_g Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective C_oss Specified
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Flyback Xfmr. Reset
• Single Transistor Forward Xfmr. Reset (Both for US Line
Input Only)
TO-220
IRF740APbF
SiHF740A-E3
IRF740A
SiHF740A
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
T_C = 25 °C
V_GS
I_D
I_DM
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 50 V, starting T_J = 25 °C, L = 12.6 mH, R_G = 25 Ω I_AS = 10 A (see fig. 12).
c. I_SD ≤ 10 A, dV/dt ≤ 330 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91051
S-81291-Rev. A, 16-Jun-08
LIMIT
± 30
10
6.3
40
1.0
630
10
12.5
125
5.9
- 55 to + 150
300^d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
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