IRF644N Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)

IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
250 V
V_GS = 10 V
54
9.2
26
Single
D²PAK (TO-263)
0.240
D
GD
S
I²PAK (TO-262)
G
TO-220
S
N-Channel MOSFET
S
D
G
FEATURES
• Advanced Process Technology
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D²PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on
resistance in any existing surface mount package. The
D²PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
TO-220
IRF644NPbF
Lead (Pb)-free
SiHF644N-E3
SnPb
IRF644N
SiHF644N
Note
a. See device orientation.
D²PAK (TO-263)
IRF644NSPbF
SiHF644NS-E3
IRF644NS
SiHF644NS
D²PAK (TO-263)
IRF644NSTRLPbF^a
SiHF644NSTL-E3^a
IRF644NSTRL^a
SiHF644NSTL^a
D²PAK (TO-263)
IRF644NSTRRPbF^a
SiHF644NSTR-E3^a
IRF644NSTRR^a
SiHF644NSTR^a
I²PAK (TO-262)
IRF644NLPbF
SiHF644NL-E3
IRF644NL
SiHF644NL
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Gate-Source Voltage
V_GS
Continuous Drain Current
Pulsed Drain Current^a
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Linear Derating Factor
Single Pulse Avalanche Energy^b
E_AS
Avalanche Current
I_AR
Repetitive Avalanche Energy
E_AR
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
T_C = 25 °C
P_D
dV/dt
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
± 20
14
9.9
56
1.0
180^e
8.4
15
150
7.9
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
Document Number: 91038
S-Pending-Rev. A, 19-Jun-08
WORK-IN-PROGRESS
www.vishay.com
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