IRF640S Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET

IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
200
V_GS = 10 V
70
13
39
Single
0.18
D
I²PAK
D²PAK
(TO-262)
(TO-263)
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Surface Mount
• Low-Profile Through-Hole
• Available in Tape and Reel
• Dynamic dV/dt Rating
Available
RoHS*
COMPLIANT
• 150 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combinations of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D²PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the highest
power capability and the last lowest possible on-resistance in
any existing surface mount package. The D²PAK is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0 W in a
typical surface mount application. The through-hole version
(IRF640L/SiHF640L) is available for low-profile applications.
ORDERING INFORMATION
Package
D²PAK (TO-263)
Lead (Pb)-free
IRF640SPbF
SiHF640S-E3
SnPb
IRF640S
SiHF640S
Note
a. See device orientation.
D²PAK (TO-263)
IRF640STRLPbF^a
SiHF6340STL-E3^a
IRF640STRL^a
SiHF640STL^a
D²PAK (TO-263)
IRF640STRRPbF^a
SiHF640STR-E3^a
IRF640STRR^a
SiHF640STR^a
I²PAK (TO-262)
IRF640LPbF
SiHF640L-E3
IRF640L
SiHF640L
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^{a, e}
Linear Derating Factor
Single Pulse Avalanche Energy^{b, e}
Avalanche Current^a
Repetiitive Avalanche Energy^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt^{c, e}
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
T_C = 25 °C
T_A = 25 °C
V_DS
V_GS
I_D
I_DM
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 50 V, starting T_J = 25 °C, L = 2.7 mH, R_G = 25 Ω, I_AS = 18 A (see fig. 12).
c. I_SD ≤ 18 A, dI/dt ≤ 150 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
e. Uses IRF640/SiHF640 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
200
± 20
18
11
72
1.0
580
18
13
3.1
130
5.0
- 55 to + 150
300^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Document Number: 91037
S-81241-Rev. A, 07-Jul-08
www.vishay.com
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