IRF1324SLPBF Datasheet, PDF (1/10 Pages) Vishay Siliconix – High Efficiency Synchronous Rectification in SMPS

Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 97353A
IRF1324SPbF
IRF1324LPbF
HEXFET^® Power MOSFET
D _VDSS
24V
R_DS(on) typ.
1.3mΩ
max.
I_{D (Silicon Limited)}
1.65mΩ
c 340A
S ^I_{D (Package Limited)} 195A
S
GD
D²Pak
IRF1324SPbF
GDS
TO-262
IRF1324LPbF
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)
d Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
f Peak Diode Recovery
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
E_{AS (Thermally limited)}
I_AR
E_AR
e Single Pulse Avalanche Energy
Ãd Avalanche Current
g Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
R_θJA
Parameter
k Junction-to-Case
jk Junction-to-Ambient (PCB Mounted, steady-state)
www.irf.com
D
Drain
S
Source
Max.
340
240
195
1420
300
2.0
± 20
0.46
-55 to + 175
300
Units
A
W
W/°C
V
V/ns
°C
270
See Fig. 14, 15, 22a, 22b
Typ.
–––
–––
Max.
0.50
40
mJ
A
mJ
Units
°C/W
1
09/24/09