English
Language : 

IMBD4448-G Datasheet, PDF (1/5 Pages) Vishay Siliconix – Small Signal Switching Diode
www.vishay.com
IMBD4448-G
Vishay Semiconductors
Small Signal Switching Diode
3
1
2
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.1 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode in case SOT-23, especially
suited for automatic insertion.
• AEC-Q101 qualified
• Base P/N-G3 - green, commercial grade
• Material categorization: 
For definitions of compliance please see
www.vishay.com/doc?99912







PARTS TABLE
PART
ORDERING CODE
IMBD4448-G
IMBD4448-G3-08 or IMBD4448-G3-18
INTERNAL CONSTRUCTION
Single diode
TYPE MARKING
AJ
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
VR
Peak reverse voltage
VRM
Rectified current (average) half wave
rectification with resistive load (1)
f  50 Hz
IF(AV)
Surge forward current
Power dissipation (1)
t < 1 s and Tj = 25 °C
IFSM
Ptot
VALUE
75
100
150
500
350
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
RthJA
Junction temperature
Tj
Storage temperature range
Tstg
Operating temperature range
Top
Note
(1) Device on fiberglass substrate, see layout on next page.
VALUE
450
150
- 65 to + 150
- 55 to + 150
UNIT
V
V
mA
mA
mW
UNIT
K/W
°C
°C
°C
Rev. 1.1, 15-May-13
1
Document Number: 85883
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000