ILD223T Datasheet, PDF (1/2 Pages) Vishay Siliconix – Dual Photodarlington Small Outline Surface Mount Optocoupler

ILD223T
Dual Photodarlington
Small Outline Surface Mount Optocoupler
FEATURES
• Two Channel Optocoupler
• High Current Transfer Ratio at I_F=1.0 mA,
500% Min.
• Isolation Test Voltage, 3000 V_RMS
• Electrical Specifications Similar to Standard
6-pin Coupler
• Compatible with Dual Wave, Vapor Phase and
IR Reflow Soldering
• SOIC-8 Surface Mountable Package
• Standard Lead Spacing, .05"
• Available only on Tape and Reel Option (Con-
forms to EIA Standard 481-2)
• Underwriters Lab File #E52744
DESCRIPTION
The ILD223T is a high current transfer ratio (CTR)
optocoupler. It has a Gallium Arsenide infrared LED
emitter and a silicon NPN photodarlington transis-
tor detector.
This device has CTRs tested at an LED current of
1.0 mA. This low drive current permits easy inter-
facing from CMOS to LSTTL or TTL.
The ILD223T is constructed in a standard SOIC-8A
foot print which makes it ideally suited for high den-
sity applications. In addition to eliminating through-
holes requirements, this package conforms to stan-
dards for surface mounted devices.
Maximum Ratings (Each Channel)
Emitter
Peak Reverse Voltage ..................................... 6.0 V
Peak Pulsed Current (1.0 µs, 300 pps) ........... 3.0 A
Continuous Forward Current per Channel .... 30 mA
Power Dissipation at 25°C............................ 45 mW
Derate Linearly from 25°C ...................... 0.4 mW/°C
Detector
Collector-Emitter Breakdown Voltage............... 30 V
Emitter-Collector Breakdown Voltage.............. 5.0 V
Power Dissipation per Channel .................... 75 mW
Derate Linearly from 25°C ...................... 3.1 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(2 LEDs + 2 Detectors, 2 Channels)....... 240 mW
Derate Linearly from 25°C ...................... 2.0 mW/°C
Storage Temperature ................... –55°C to +150°C
Operating Temperature ................ –55°C to +100°C
Soldering Time at 260°C ...............................10 sec
Document Number: 83648
Revision 17-August-01
Dimensions in inches (mm)
.120±.002
(3.05±.05)
.240
(6.10)
Pin 1
Anode 1
Cathode 2
CL ^.154±.002
(3.91±.05)
Anode 3
Cathode 4
8 Collector
7 Emitter
6 Collector
5 Emitter
.004 (.10)
.008 (.20)
.
.016 (.41)
.230±.002
(5.84±.05)
.050 (1.27) typ.
.040 (1.02)
.015±.002
(.38±.05)
.008 (.20)
.020±.004
(.5±.10)
2 plcs.
40° _7°
5° max.
R.010
(.25) max.
.058
(1.49)
.125 (3.18)
Lead
Coplanarity
±.001 (.04)
max.
Table 1. Characteristics T_A=25°C
Parameter
Symbol Min. Typ. Max. Unit Condition
Emitter
Forward Voltage V_F
Reverse Current I_R
Capacitance
C_O
— — 1.3 V
I_F=1.0 mA
— 0.1 100 µA V_R=6.0 V
— 25 —
pF V_F=0 V
F=1.0 MHz
Detector
Breakdown
Voltage
Current,
Collector-Emitter
Capacitance,
Collector-Emitter
BV_CEO 30
—
—
BV_ECO 5.0 —
—
I_CEO
— — 50
C_CE
— 3.4 —
V
I_C=10 µA
I_E=10 µA
nA V_CE=5.0 V
I_F=0
pF V_CE=5.0 V
Package
DC Current
Transfer Ratio
CTR_DC 500 — —
%
Saturation
Voltage,
V_CEsat —
—
1.0 V
Collector-Emitter
I_F=1.0 mA,
V_CE=5.0 V
I_F=1.0 mA,
I_CE=0.5 mA
Capacitance,
C_IO
Input to Output
0.5 — pF — —
Resistance,
R_IO
Input to Output
100 — GΩ — —
Turn-On Time
Turn-Off Time
Isolation Test
Voltage
t_ON
15 —
µs
—
V_CC=10 V
t_OFF
30 —
µs
—
R_L=100 Ω
I_F=5.0 mA
V_IO
3000 — —
V_RMS t=1.0 sec.
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