HFA60EA120P Datasheet, PDF (1/7 Pages) Vishay Siliconix – HEXFRED® Ultrafast Soft Recovery Diode, 60 A

HFA60EA120P
Vishay High Power Products
SOT-227
HEXFRED^®
Ultrafast Soft Recovery Diode, 60 A
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FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Antiparallel diodes
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• UL pending
• Totally lead (Pb)-free
• Designed and qualified for industrial level
PRODUCT SUMMARY
V_R
V_F (typical)
t_rr (typical)
I_F(DC) at T_C
1200 V
2.2 V
145 ns
30 A at 120 °C
DESCRIPTION/APPLICATIONS
This SOT-227 modules with HEXFRED^® rectifier are in
antiparallel configuration. The antiparallel configuration is
used for simple series rectifier and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such as
HV power supplies, electronic welders, motor control and
inverters.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
V_R
Continuous forward current
I_F
Single pulse forward current
I_FSM
Maximum repetitive forward current
I_FRM
Maximum power dissipation
P_D
RMS isolation voltage
Operating junction and storage
temperature range
V_ISOL
T_J, T_Stg
TEST CONDITIONS
T_C = 120 °C
T_J = 25 °C
Rated V_R, square wave, 20 kHz, T_C = 60 °C
T_C = 25 °C
T_C = 100 °C
Any terminal to case, t = 1 minute
MAX.
1200
30
350
130
312
125
2500
- 55 to + 150
UNITS
V
A
W
V
°C
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Cathode to anode
breakdown voltage
V_BR
I_R = 100 µA
1200
I_F = 30 A
-
Forward voltage
V_FM
I_F = 60 A
-
I_F = 60 A, T_J = 150 °C
-
V_R = V_R rated
-
Reverse leakage current
I_RM
T_J = 150 °C, V_R = V_R rated
-
TYP.
-
2.2
2.7
2.1
2.0
2.7
MAX.
-
3.0
3.8
-
75
10
UNITS
V
µA
mA
Document Number: 94610
Revision: 17-Oct-08
For technical questions, contact: [e-mail]
www.vishay.com
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