HFA50PA60CPBF Datasheet, PDF (1/7 Pages) International Rectifier – Ultrafast,sSoft Recovery Diode

HFA50PA60CPbF
Vishay High Power Products
HEXFRED^®
Ultrafast Soft Recovery Diode, 2 x 25 A
Base
common
cathode
2
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I_RRM
• Very low Q_rr
• Specified at operating conditions
• Lead (Pb)-free
• Designed and qualified for industrial level
Pb-free
Available
RoHS*
COMPLIANT
TO-247AC
1
3
Anode
1
2
Anode
2
Common
cathode
PRODUCT SUMMARY
V_R
V_F at 25 A at 25 °C
I_F(AV)
t_rr (typical)
T_J (maximum)
Q_rr (typical)
dI_(rec)M/dt (typical) at 125 °C
I_RRM (typical)
600 V
1.7 V
2 x 25 A
23 ns
150 °C
112 nC
160 A/µs
4.5 A
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA50PA60C is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial construction
and advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 25 A per leg continuous
current, the HFA50PA60C is especially well suited for use as
the companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED^® product line features
extremely low values of peak recovery current (I_RRM) and
does not exhibit any tendency to “snap-off” during the
t_b portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA50PA60C is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
per leg
Maximum continuous forward current
per device
Single pulse forward current
Maximum repetitive forward current
SYMBOL
V_R
I_F
I_FSM
I_FRM
Maximum power dissipation
P_D
Operating junction and storage temperature range T_J, T_Stg
TEST CONDITIONS
T_C = 100 °C
T_C = 25 °C
T_C = 100 °C
VALUES
600
25
50
225
100
150
60
- 55 to + 150
UNITS
V
A
W
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94074
Revision: 25-Jul-08
For technical questions, contact: [e-mail]
www.vishay.com
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