HFA16TB120S Datasheet, PDF (1/6 Pages) International Rectifier – Ultrafast, Soft Recovery Diode

HFA16TB120S
Vishay High Power Products
HEXFRED^®
Ultrafast Soft Recovery Diode, 16 A
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I_RRM
• Very low Q_rr
• Specified at operating conditions
• Designed and qualified for industrial level
2
1
N/C
3
Anode
D²PAK
PRODUCT SUMMARY
V_R
V_F at 16 A at 25 °C
I_F(AV)
t_rr (typical)
T_J (maximum)
Q_rr (typical)
dI_(rec)M/dt (typical) at 125 °C
I_RRM (typical)
1200 V
3V
16 A
30 ns
150 °C
260 nC
76 A/µs
5.8 A
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA16TB120S is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 1200 V and 16 A continuous current, the
HFA16TB120S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED^® product line features
extremely low values of peak recovery current (I_RRM) and
does not exhibit any tendency to “snap-off” during the
t_b portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA16TB120S is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
SYMBOL
V_R
I_F
I_FSM
I_FRM
Maximum power dissipation
P_D
Operating junction and storage temperature range T_J, T_Stg
TEST CONDITIONS
T_C = 100 °C
T_C = 25 °C
T_C = 100 °C
MAX.
1200
16
190
64
151
60
- 55 to + 150
UNITS
V
A
W
°C
Document Number: 93075
Revision: 22-Oct-08
For technical questions, contact: [e-mail]
www.vishay.com
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