HFA16TA60CPBF_11 Datasheet, PDF (1/8 Pages) Vishay Siliconix – HEXFRED Ultrafast Soft Recovery Diode, 2 x 8 A

VS-HFA16TA60CPbF
Vishay Semiconductors
HEXFRED^®
Ultrafast Soft Recovery Diode, 2 x 8 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I_RRM and Q_rr
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
Base
common
cathode
2
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
Anode
1
2
Common
cathode
Anode
3
TO-220AB
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
t_rr (typ.)
T_J max.
Diode variation
TO-220AB
2x8A
600 V
1.7 V
18 ns
150 °C
Common cathode
DESCRIPTION
VS-HFA16TA60CPbF is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 8 A per
leg continuous current, the VS-HFA16TA60CPbF is
especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED^® product line features extremely low values of
peak recovery current (I_RRM) and does not exhibit any
tendency to “snap-off” during the t_b portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA16TA60CPbF is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
per leg
Maximum continuous forward current
per device
Single pulse forward current
Maximum repetitive forward current
SYMBOL
V_R
I_F
I_FSM
I_FRM
Maximum power dissipation
P_D
Operating junction and storage temperature range T_J, T_Stg
TEST CONDITIONS
T_C = 100 °C
T_C = 25 °C
T_C = 100 °C
VALUES
600
8
16
60
24
36
14
- 55 to + 150
UNITS
V
A
W
°C
Document Number: 94058 For technical questions within your region, please contact one of the following:
Revision: 24-May-11
[e-mail], [e-mail], [e-mail]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000