HFA15TB60SPBF_11 Datasheet, PDF (1/9 Pages) Vishay Siliconix – HEXFRED, Ultrafast Soft Recovery Diode, 15 A

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VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF
Vishay Semiconductors
HEXFRED^®,
Ultrafast Soft Recovery Diode, 15 A
VS-HFA15 TB60SPbF
VS-HFA15 TB60-1PbF
Base
cathode
2
2
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I_RRM and Q_rr
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Halogen-free according to IEC61249-2-21
definition
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
• AEC-Q101 qualified
1
N/C
3
Anode
D²PAK
1
3
N/C
Anode
TO-262
PRODUCT SUMMARY
Package
TO-263AB (D²PAK), TO-262AA
I_F(AV)
V_R
V_F at I_F
15 A
600 V
1.7 V
t_rr (typ.)
23 ns
T_J max.
Diode variation
150 °C
Single die
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF is a state of
the art ultrafast recovery diode. Employing the latest in
epitaxial construction and advanced processing techniques
it features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and
15 A continuous current, the VS-HFA15TB60SPbF,
VS-HFA15TB60-1PbF is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED^® product line features
extremely low values of peak recovery current (I_RRM) and
does not exhibit any tendency to “snap-off” during the t_b
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA15TB60SPbF,
VS-HFA15TB60-1PbF is ideally suited for applications in
power supplies and power conversion systems (such as
inverters), motor drives, and many other similar applications
where high speed, high efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
V_R
I_F
I_FSM
I_FRM
P_D
T_J, T_Stg
TEST CONDITIONS
T_C = 100 °C
T_C = 25 °C
T_C = 100 °C
VALUES
600
15
150
60
74
29
- 55 to + 150
UNITS
V
A
W
°C
Revision: 10-Jun-11
1
Document Number: 94054
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