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HFA12PA120CPBF Datasheet, PDF (1/7 Pages) Vishay Siliconix – Ultrafast Soft Recovery Diode, 2 x 6 A
HFA12PA120CPbF
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 2 x 6 A
Base
common
cathode
2
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low IRRM
• Very low Qrr
• Specified at operating conditions
• Lead (Pb)-free
• Designed and qualified for industrial level
Pb-free
Available
RoHS*
COMPLIANT
TO-247AC
1
3
Anode
1
2
Anode
2
Common
cathode
PRODUCT SUMMARY
VR
VF at 6 A at 25 °C
IF(AV)
trr (typical)
TJ (maximum)
Qrr (typical)
dI(rec)M/dt (typical) at 125 °C
IRRM (typical)
1200 V
3.0 V
2x6A
26 ns
150 °C
116 nC
100 A/µs
4.4 A
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA12PA120CPbF is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial construction
and advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
The HFA12PA120CPbF has basic ratings of 1200 V and 6 A
per leg continuous current. In addition to ultrafast recovery
time, the HEXFRED® product line features extremely low
values of peak recovery current (IRRM) and does not exhibit
any tendency to “snap-off” during the tb portion of recovery.
The HEXFRED features combine to offer designers a
rectifier with lower noise and significantly lower switching
losses in both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED HFA12PA120CPbF is ideally suited for
applications in power supplies and power conversion
systems (such as inverters, converters, UPS systems, and
power factor correction circuits), motor drives, and many
other similar applications where high speed, high efficiency
is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
per leg
per device
Single pulse forward current
Maximum repetitive forward current
SYMBOL
VR
IF
IFSM
IFRM
Maximum power dissipation
PD
Operating junction and storage temperature range
TJ, TStg
TEST CONDITIONS
TC = 100 °C
TC = 25 °C
TC = 100 °C
VALUES
1200
6
12
80
24
62.5
25
- 55 to + 150
UNITS
V
A
W
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94597
Revision: 25-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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