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HFA12PA120C Datasheet, PDF (1/7 Pages) International Rectifier – Ultrafast, Soft Recovery Diode
HFA12PA120C
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 2 x 6 A
Base
common
cathode
2
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low IRRM
• Very low Qrr
• Specified at operating conditions
• Designed and qualified for industrial level
TO-247AC
1
3
Anode
1
2
Anode
2
Common
cathode
PRODUCT SUMMARY
VR
VF at 6 A at 25 °C
IF(AV)
trr (typical)
TJ (maximum)
Qrr (typical)
dI(rec)M/dt (typical) at 125 °C
IRRM (typical)
1200 V
3.0 V
2x6A
26 ns
150 °C
116 nC
100 A/µs
4.4 A
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA12PA120C is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial construction
and advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
The HFA12PA120C has basic ratings of 1200 V and 6 A per
leg continuous current. In addition to ultrafast recovery time,
the HEXFRED® product line features extremely low values of
peak recovery current (IRRM) and does not exhibit any
tendency to “snap-off” during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED HFA12PA120C is ideally suited for applications
in power supplies and power conversion systems (such as
inverters, converters, UPS systems, and power factor
correction circuits), motor drives, and many other similar
applications where high speed, high efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
per leg
per device
Single pulse forward current
Maximum repetitive forward current
SYMBOL
VR
IF
IFSM
IFRM
Maximum power dissipation
PD
Operating junction and storage temperature range
TJ, TStg
TEST CONDITIONS
TC = 100 °C
TC = 25 °C
TC = 100 °C
VALUES
1200
6
12
80
24
62.5
25
- 55 to + 150
UNITS
V
A
W
°C
Document Number: 93914
Revision: 25-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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