HFA120FA60P Datasheet, PDF (1/7 Pages) Vishay Siliconix – HEXFRED® Ultrafast Soft Recovery Diode, 60 A

HFA120FA60P
Vishay High Power Products
HEXFRED^®
Ultrafast Soft Recovery Diode, 60 A
SOT-227
K2
A2
K1
A1
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• UL pending
• Totally lead (Pb)-free
• Designed for industrial level
RoHS
COMPLIANT
PRODUCT SUMMARY
V_R
V_F (typical) at 125 °C
Q_rr (typical)
I_RRM (typical)
t_rr (typical)
dI_(rec)M/dt (typical) at 125 °C
I_F(DC) at T_C
600 V
1.4 V
270 nC
7.0 A
65 ns
270 A/µs
40 A at 100 °C
DESCRIPTION
This SOT-227 modules with HEXFRED^® rectifier are
available in two basic configurations. They are the
antiparallel and the parallel configurations. The antiparallel
configuration (HFA120EA60) is used for simple series
rectifier and high voltage application. The parallel
configuration (HFA120FA60) is used for simple parallel
rectifier and high current application. The semiconductor in
the SOT-227 package is isolated from the copper base plate,
allowing for common heatsinks and compact assemblies to
be built. These modules are intended for general
applications such as power supplies, battery chargers,
electronic welders, motor control, DC chopper, and inverters.
ABSOLUTE MAXIMUM RATINGS PER LEG
PARAMETER
SYMBOL
Cathode to anode voltage
V_R
Continuous forward current
I_F
Single pulse forward current
Maximum repetitive forward current
RMS isolation voltage, any terminal to case
I_FSM
I_FRM
V_ISOL
Maximum power dissipation
P_D
Operating junction and storage temperature range T_J, T_Stg
TEST CONDITIONS
T_C = 25 °C
T_C = 100 °C
t = 1 minute
T_C = 25 °C
T_C = 100 °C
VALUES
600
75
40
TBD
180
2500
180
71
- 55 to 150
UNITS
V
A
V
W
°C
ELECTRICAL SPECIFICATIONS PER LEG (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Cathode to anode breakdown voltage
V_BR
I_R = 100 µA
600
-
I_F = 60 A
-
1.5
Maximum forward voltage
V_FM
I_F = 120 A
See fig. 1
-
1.9
Maximum reverse leakage current
I_F = 60 A, T_J = 125 °C
-
1.4
V_R = V_R rated
-
2.5
I_RM
See fig. 2
T_J = 125 °C, V_R = 0.8 x V_R rated
-
130
Junction capacitance
C_T
V_R = 200 V
See fig. 3
-
120
MAX.
-
1.7
2.1
1.6
20
2000
170
UNITS
V
µA
pF
Document Number: 94049
Revision: 04-Aug-08
For technical questions, contact: [e-mail]
www.vishay.com
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