HFA08TB60S Datasheet, PDF (1/6 Pages) International Rectifier – Ultrafast, Soft Recovery Diode

HFA08TB60S
Vishay High Power Products
HEXFRED^®
Ultrafast Soft Recovery Diode, 8 A
Base
cathode
+
2
N/C 1
3 Anode
-
D²PAK
PRODUCT SUMMARY
V_R
V_F at 8 A at 25 °C
I_F(AV)
t_rr (typical)
T_J (maximum)
Q_rr (typical)
dI_(rec)M/dt (typical)
I_RRM
600 V
1.7 V
8A
18 ns
150 °C
65 nC
240 A/µs
5.0 A
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I_RRM
• Very low Q_rr
• Specified at operating conditions
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA08TB60S is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 600 V and 8 A continuous current, the
HFA08TB60S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED^® product line features
extremely low values of peak recovery current (I_RRM) and
does not exhibit any tendency to “snap-off” during the t_b
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA08TB60S is ideally
suited for applications in power supplies (PFC boost diode)
and power conversion systems (such as inverters), motor
drives, and many other similar applications where high
speed, high efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
V_R
I_F
I_FSM
I_FRM
P_D
T_J, T_Stg
TEST CONDITIONS
T_C = 100 °C
T_C = 25 °C
T_C = 100 °C
VALUES
600
8.0
60
24
36
14
- 55 to + 150
UNITS
V
A
W
°C
Document Number: 93045
Revision: 22-Oct-08
For technical questions, contact: [e-mail]
www.vishay.com
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