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HFA08TA60CSPBF_10 Datasheet, PDF (1/8 Pages) Vishay Siliconix – HEXFRED Ultrafast Soft Recovery Diode, 2 x 4 A
VS-HFA08TA60CSPbF
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 2 x 4 A
D2PAK
Base
common
cathode
2
1
2
3
Anode
Common
cathode
Anode
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low IRRM
• Very low Qrr
• Specified at operating conditions
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Halogen-free according to IEC 61249-2-21
definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
PRODUCT SUMMARY
VR
VF at 4 A at 25 °C
IF(AV)
trr (typical)
TJ (maximum)
Qrr
dI(rec)M/dt
600 V
1.8 V
2x4A
17 ns
150 °C
40 nC
280 A/μs
DESCRIPTION
VS-HFA08TA60CSPbF is a state of the art center tap
ultrafast recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 4 A per
leg continuous current, the VS-HFA08TA60CSPbF is
especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED® product line features extremely low values of
peak recovery current (IRRM) and does not exhibit any
tendency to “snap-off” during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA08TA60CSPbF is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
per leg
per device
Single pulse forward current
Maximum repetitive forward current
SYMBOL
VR
IF
IFSM
IFRM
Maximum power dissipation
PD
Operating junction and storage temperature range
TJ, TStg
TEST CONDITIONS
TC = 100 °C
TC = 25 °C
TC = 100 °C
VALUES
600
4
8
25
16
25
10
- 55 to + 150
Document Number: 94596
Revision: 24-Feb-10
For technical questions, contact: diodestech@vishay.com
UNITS
V
A
W
°C
www.vishay.com
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