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HFA08SD60S-M3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – HEXFRED Ultrafast Soft Recovery Diode, 8 A
VS-HFA08SD60S-M3
Vishay Semiconductors
HEXFRED® Ultrafast Soft Recovery Diode, 8 A
D-PAK (TO-252AA)
2, 4
1
N/C
3
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr typ.
TJ max.
Diode variation
D-PAK (TO-252AA)
8A
600 V
1.7 V
18 ns
150 °C
Single die
FEATURES
• Ultrafast recovery time
• Ultrasoft recovery
• Very low IRRM
• Very low Qrr
• Guaranteed avalanche
• Specified at operating conditions
• Compliant to RoHS Directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21
definition
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems. The softness of
the recovery eliminates the need for a snubber in most
applications. These devices are ideally suited for
freewheeling, flyback, power converters, motor drives, and
other applications where high speed and reduced switching
losses are design requirements.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Peak repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
VRRM
IF
IFSM
IFRM
PD
TJ, TStg
TEST CONDITIONS
TC = 100 °C
TC = 100 °C
VALUES
600
8
60
24
14
- 55 to + 150
UNITS
V
A
W
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
IF = 8 A
Forward voltage
VF
IF = 16 A
See fig. 1
IF = 8 A, TJ = 125 °C
Maximum reverse
leakage current
VR = VR rated
IR
TJ = 125 °C, VR = 0.8 x VR rated
Junction capacitance
CT
VR = 200 V
See fig. 3
Series inductance
LS
Measured lead to lead 5 mm from package body
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.4
1.7
1.4
0.3
100
10
8.0
MAX.
-
1.7
2.1
1.7
5.0
500
25
-
UNITS
V
μA
pF
nH
Document Number: 93474 For technical questions within your region, please contact one of the following:
Revision: 31-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000