English
Language : 

HFA08PB60PBF Datasheet, PDF (1/7 Pages) International Rectifier – Ultra, Soft Recovery Diode
HFA08PB60PbF
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 8 A
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low IRRM
• Very low Qrr
• Specified at operating conditions
• Lead (Pb)-free
• Designed and qualified for industrial level
Available
RoHS*
COMPLIANT
Base
common
cathode
2
1
Anode
1
3
Anode
2
TO-247AC modified
PRODUCT SUMMARY
VR
VF at 8 A at 25 °C
IF(AV)
trr (typical)
TJ (maximum)
Qrr (typical)
dI(rec)M/dt (typical) at 125 °C
IRRM (typical)
600 V
1.7 V
8A
18 ns
150 °C
65 nC
210 A/µs
3.5 A
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA08PB60 is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 600 V and 8 A continuous current, the HFA08PB60
is especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED® product line features extremely low values of
peak recovery current (IRRM) and does not exhibit any
tendency to “snap-off” during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED HFA08PB60 is ideally suited for applications in
power supplies and power conversion systems (such as
inverters), motor drives, and many other similar applications
where high speed, high efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
SYMBOL
VR
IF
IFSM
IFRM
Maximum power dissipation
PD
Operating junction and storage temperature range TJ, TStg
TEST CONDITIONS
TC = 100 °C
TC = 25 °C
TC = 100 °C
VALUES
600
8
60
24
36
14
- 55 to + 150
UNITS
V
A
W
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94041
Revision: 25-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1