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HFA08PB60 Datasheet, PDF (1/7 Pages) International Rectifier – Ultrafast, Soft Recovery Diode
HFA08PB60
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 8 A
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low IRRM
• Very low Qrr
• Specified at operating conditions
• Designed and qualified for industrial level
Base
common
cathode
2
1
Anode
1
3
Anode
2
TO-247AC modified
PRODUCT SUMMARY
VR
VF at 8 A at 25 °C
IF(AV)
trr (typical)
TJ (maximum)
Qrr (typical)
dI(rec)M/dt (typical) at 125 °C
IRRM (typical)
600 V
1.7 V
8A
18 ns
150 °C
65 nC
210 A/µs
3.5 A
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA08PB60 is a state of the art center tap ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 8 A continuous current, the
HFA08PB60 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the tb
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA08PB60 is ideally suited
for applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
SYMBOL
VR
IF
IFSM
IFRM
Maximum power dissipation
PD
Operating junction and storage temperature range TJ, TStg
TEST CONDITIONS
TC = 100 °C
TC = 25 °C
TC = 100 °C
VALUES
600
8
60
24
36
14
- 55 to + 150
UNITS
V
A
W
°C
Document Number: 93038
Revision: 30-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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