English
Language : 

HFA06PB120 Datasheet, PDF (1/7 Pages) International Rectifier – HEXFRED Ultrafast, Soft Recovery Diode
HFA06PB120
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 6 A
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low IRRM
• Very low Qrr
• Specified at operating conditions
• Designed and qualified for industrial level
Base
common
cathode
2
1
Anode
1
3
Anode
2
TO-247AC modified
PRODUCT SUMMARY
VR
VF at 6 A at 25 °C
IF(AV)
trr (typical)
TJ (maximum)
Qrr (typical)
dI(rec)M/dt (typical) at 125 °C
IRRM (typical)
1200 V
3.0 V
6A
26 ns
150 °C
116 nC
100 A/µs
4.4 A
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA06PB120 is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 1200 V and 6 A continuous current, the
HFA06PB120 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the
tb portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA06PB120 is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
VR
IF
IFSM
IFRM
PD
TJ, TStg
TEST CONDITIONS
TC = 100 °C
TC = 25 °C
TC = 100 °C
VALUES
1200
6
80
24
62.5
25
- 55 to + 150
UNITS
V
A
W
°C
Document Number: 93034
Revision: 29-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1