GUR5H60_07 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Ultrafast Rectifier

GUR5H60, GURF5H60 & GURB5H60
Vishay General Semiconductor
Ultrafast Rectifier
TO-220AC
ITO-220AC
GUR5H60
PIN 1
PIN 2
2
1
CASE
TO-263AB
K
GURF5H60
PIN 1
PIN 2
2
1
2
1
GURB5H60
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
t_rr
V_F
T_J max.
5.0 A
600 V
90 A
30 ns
1.6 V
150 °C
FEATURES
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
• Solder dip 260 °C, 40 s (for TO-220AC and
ITO-220AC package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high voltage and high frequency power
factor corrector, freewheeling diodes and secondary
dc-to-dc rectification application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum working reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
V_RWM
V_RMS
V_DC
I_F(AV)
I_FSM
Reverse energy
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
E_R
T_J, T_STG
V_AC
VALUE
600
480
420
600
5
90
10
- 55 to + 150
1500
UNIT
V
V
V
V
A
A
mJ
°C
V
Document Number: 88650 For technical questions within your region, please contact one of the following:
Revision: 06-Aug-07
[e-mail], [e-mail], [e-mail]
www.vishay.com
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