GT100DA60U Datasheet, PDF (1/10 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Trench IGBT), 100 A

GT100DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
SOT-227
PRODUCT SUMMARY
V_CES
I_C DC
V_CE(on) typical at 100 A, 25 °C
I_F DC
600 V
100 A at 117 °C
1.72 V
100 A at 25 °C
FEATURES
• Trench IGBT technology with positive
temperature coefficient
• Square RBSOA
• 3 μs short circuit capability
• FRED Pt^® antiparallel diodes with ultrasoft reverse
recovery
• T_J maximum = 175 °C
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Speed 4 kHz to 30 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
Power dissipation, IGBT
Power dissipation, diode
Isolation voltage
V_CES
I_C ⁽¹⁾
I_CM
I_LM
I_F
I_FSM
V_GE
P_D
P_D
V_ISOL
T_C = 25 °C
T_C = 80 °C
T_C = 25 °C
T_C = 80 °C
T_C = 25 °C
T_C = 117 °C
T_C = 25 °C
T_C = 117 °C
Any terminal to case, t = 1 min
600
184
137
350
350
100
71
200
± 20
577
223
205
79
2500
Note
(1) _{Maximum continuous collector current must be limited to 100 A to do not exceed the maximum temperature of terminals}
UNITS
V
A
V
W
V
Document Number: 93185 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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