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GSIB6A20_14 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Single-Phase Single In-Line Bridge Rectifiers
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GSIB6A20, GSIB6A40, GSIB6A60, GSIB6A80
Vishay General Semiconductor
Single-Phase Single In-Line Bridge Rectifiers
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Case Style GSIB-5S
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
6.0 A
200 V, 400 V, 600 V, 800 V
IFSM
150 A
IR
10 μA
VF at IF = 3 V
TJ max.
Package
Diode variations
1.0 V
150 °C
GSIB-5S
In-Line
FEATURES
• UL recognition file number E54214
• Thin single in-line package
• Glass passivated chip junction
• High surge current capability
• High case dielectric strength of 1500 VRMS
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, industrial automation applications.
MECHANICAL DATA
Case: GSIB-5S
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL GSIB6A20 GSIB6A40 GSIB6A60
Maximum repetitive peak reverse voltage
VRRM
200
Maximum RMS voltage
VRMS
140
Maximum DC blocking voltage
VDC
200
Maximum average forward rectified
output current at
TC = 100 °C (1)
TA = 25 °C (2)
IF(AV)
Peak forward surge current single sine-wave
superimposed on rated load
IFSM
Rating for fusing (t < 8.3 ms)
I2t
400
600
280
420
400
600
6.0
2.8
150
93
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
Notes
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
GSIB6A80
800
560
800
UNIT
V
V
V
A
A
A2s
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL GSIB6A20 GSIB6A40 GSIB6A60
Maximum instantaneous forward
voltage drop per diode
3.0 A
VF
1.00
Maximum DC reverse current at
TA = 25 °C
rated DC blocking voltage per diode TA = 125 °C
IR
10
250
GSIB6A80
UNIT
V
μA
Revision: 13-Jun-14
1
Document Number: 88649
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000