GSD2004WS-G Datasheet, PDF (1/4 Pages) Vishay Siliconix – Small Signal Switching Diode, High Voltage

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GSD2004WS-G
Vishay Semiconductors
Small Signal Switching Diode, High Voltage
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode, especially suited for
applications requiring high voltage capability
• AEC-Q101 qualified
• Base P/N-G3 - green, commercial grade
• Base P/N-HG3 - green, AEC-Q101 qualified
(part number available on request)
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912



PARTS TABLE
PART
ORDERING CODE
GSD2004WS-G3-08 or GSD2004WS-G3-18
GSD2004WS-G
GSD2004WS-HG3-08 or GSD2004WS-HG3-18
INTERNAL CONSTRUCTION TYPE MARKING
Single diode
B7
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Continuous reverse voltage
Repetitive peak reverse voltage
Forward current (continuous)
Peak repetitive forward current
Non-repetitive peak forward current
Power dissipation ⁽¹⁾
t_p = 1 μs
t_p = 1 s
V_R
240
V_RRM
300
I_F
225
I_FRM
625
I_FSM
4
I_FSM
1
P_tot
200
UNIT
V
V
mA
mA
A
A
mW
THERMAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Typical thermal resistance junction to
ambient air ⁽¹⁾
R_thJA
650
Junction temperature
Storage temperature range
Operating temperature range
T_j
150
T_stg
-65 to +150
T_op
-55 to +150
Note
(1) _{Valid provided that electrodes are kept at ambient temperature}
UNIT
K/W
°C
°C
°C
Rev. 1.2, 27-Sep-16
1
Document Number: 85415
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000