GSD2004S-G Datasheet, PDF (1/4 Pages) Vishay Siliconix – Silicon epitaxial planar diode

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GSD2004S-G
Vishay Semiconductors
Dual In-Series Small Signal High Voltage Switching Diode
3
1
2
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.1 mg
Packaging codes/options:
18/10K per 13” reel (8 mm tape), 10K/box
08/3K per 7” reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• Fast switching dual in-series diode, especially
suited for applications requiring high voltage
capability
• AEC-Q101 qualified
• Base P/N-G3 - green, commercial grade
• Material categorization: 
For definitions of compliance please see
www.vishay.com/doc?99912 





PARTS TABLE
PART
ORDERING CODE
GSD2004S-G GSD2004S-G3-08 or GSD2004S-G3-18
INTERNAL CONSTRUCTION
Dual diodes serial
TYPE MARKING
DB7
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Continuous reverse voltage
V_R
Peak repetitive reverse voltage
V_RRM
Forward current (continuous)
I_F
Peak repetitive forward current
I_FRM
t_p = 1 μs
I_FSM
Non-repetitive peak forward current
t_p = 1 s
I_FSM
Power dissipation ⁽¹⁾
P_tot
VALUE
240
300
225
625
4.0
1.0
350
THERMAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Typical thermal resistance junction to
ambient air ⁽¹⁾
R_thJA
Junction temperature
T_j
Storage temperature range
T_stg
Operating temperature range
T_op
Note
(1) _{Device on fiberglass substrate}
VALUE
357
150
- 65 to + 150
- 55 to + 150
UNIT
V
V
mA
mA
A
A
mW
UNIT
°C/W
°C
°C
°C
Rev. 1.0, 16-May-13
1
Document Number: 85423
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000