GSD2004C Datasheet, PDF (1/4 Pages) Vishay Siliconix – Silicon epitaxial planar diode

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GSD2004C
Vishay Semiconductors
Dual Common Cathode Small Signal High Voltage Switching Diode
3
1
2
18108_1
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• Fast switching dual common cathode diode,
especially suited for applications requiring high
voltage capability
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
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PARTS TABLE
PART
ORDERING CODE
GSD2004C
GSD2004C-E3-08 or GSD2004C-E3-18
GSD2004C-HE3-08 or GSD2004C-HE3-18
INTERNAL CONSTRUCTION
Dual diodes common cathode
TYPE MARKING
DBC
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Continuous reverse voltage
Peak repetitive reverse voltage
Forward current (continuous)
Peak repetitive forward current
Non-repetitive peak forward current
Power dissipation ⁽¹⁾
t_p = 1 μs
t_p = 1 s
V_R
V_RRM
I_F
I_FRM
I_FSM
P_tot
VALUE
240
300
225
625
4
1
350
UNIT
V
V
mA
mA
A
A
mW
THERMAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Typical thermal resistance junction to
ambient air ⁽¹⁾
R_thJA
Junction temperature
T_j
Storage temperature range
T_stg
Operating temperature range
T_op
Note
(1) _{Device on fiberglass substrate}
VALUE
357
150
- 65 to + 150
- 55 to + 150
UNIT
°C/W
°C
°C
°C
Rev. 1.0, 17-May-13
1
Document Number: 85424
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000