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GSD2004C-G Datasheet, PDF (1/4 Pages) Vishay Siliconix – Silicon epitaxial planar diode
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GSD2004C-G
Vishay Semiconductors
Dual Common Cathode Small Signal High Voltage Switching Diode
3
1
2
18108_1
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.1 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
ORDERING CODE
GSD2004C-G
GSD2004C-G3-08 or GSD2004C-G3-18
FEATURES
• Silicon epitaxial planar diode
• Fast switching dual common cathode diode,
especially suited for applications requiring high
voltage capability
• AEC-Q101 qualified
• Base P/N-G3 - green, commercial grade
• Material categorization: 
For definitions of compliance please see
www.vishay.com/doc?99912





INTERNAL CONSTRUCTION
Dual diodes common cathode
TYPE MARKING
DBK
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Continuous reverse voltage
Peak repetitive reverse voltage
Forward current (continuous)
Peak repetitive forward current
Non-repetitive peak forward current
Power dissipation (1)
tp = 1 μs
tp = 1 s
VR
VRRM
IF
IFRM
IFSM
Ptot
VALUE
240
300
225
625
4
1
350
UNIT
V
V
mA
mA
A
A
mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Typical thermal resistance junction to
ambient air (1)
RthJA
Junction temperature
Tj
Storage temperature range
Tstg
Operating temperature range
Top
Note
(1) Device on fiberglass substrate
VALUE
357
150
- 65 to + 150
- 55 to + 150
UNIT
°C/W
°C
°C
°C
Rev. 1.0, 17-May-13
1
Document Number: 85425
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000