English
Language : 

GPP10A_09 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Glass Passivated Junction Rectifier
GPP10A thru GPP10M
Vishay General Semiconductor
Glass Passivated Junction Rectifier
DO-204AL (DO-41)
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
50 V to 1000 V
IFSM
30 A
IR
5.0 μA
VF
1.1 V
TJ max.
150 °C
FEATURES
• Glass passivated chip junction
• Low forward voltage drop
• Low leakage current, typical IR less than 0.1 μA
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes application.
MECHANICAL DATA
Case: DO-204AL, molded epoxy over passivated chip
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL GPP10A GPP10B GPP10D GPP10G GPP10J GPP10K GPP10M UNIT
Maximum repetitive peak
reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
Maximum DC blocking voltage
VDC
50
Maximum average forward rectified
current 0.375" (9.5 mm) lead length
at TA = 75 °C
IF(AV)
Peak forward surge current 8.3 ms
single half sine-wave superimposed
IFSM
on rated load
70
140
280
420
560
700
V
100
200
400
600
800
1000
V
1.0
A
30
A
Maximum full load reverse current,
full cycle average 0.375" (9.5 mm)
lead length TA = 75 °C
IR(AV)
30
μA
Operating junction and storage
temperature range
TJ, TSTG
- 55 to + 150
°C
Document Number: 88641 For technical questions within your region, please contact one of the following:
Revision: 28-Oct-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1