GPP100MS-E3 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Low forward voltage drop

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GPP100MS-E3
Vishay General Semiconductor
Photovoltaic Solar Panel Protection Plastic Rectifier
P600
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
10 A
1000 V
440 A
V_F at I_F = 10 A (T_A = 125 °C)
0.80 V
I_R
T_J max.
Package
Diode variations
5.0 μA
175 °C
P600
Single die
FEATURES
• Glass passivated chip junction
• Low forward voltage drop
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar panel protection
MECHANICAL DATA
Case: P600
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T_A = 50 °C
Peak forward surge current 8.3 ms single half sine-wave T_A = 25 °C
Operating junction and storage temperature range
Note
(1) _{With heatsink}
SYMBOL
V_RRM
I_F(AV) ⁽¹⁾
I_FSM
T_J, T_STG
GPP100MS
1000
10
440
- 55 to + 175
UNIT
V
A
A
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage
Reverse current
I_F = 5.0 A
I_F = 10 A
I_F = 5.0 A
I_F = 10 A
V_R = 1000 V
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
Typical reverse recovery time
I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A
t_rr
Typical junction capacitance
4.0 V, 1 MHz
C_J
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: 40 ms pulse width}
TYP.
0.86
0.92
0.73
0.80
0.4
103
5.5
110
MAX.
-
1.05
-
0.95
5.0
500
-
-
UNIT
V
μA
μs
pF
Revision: 15-Aug-13
1
Document Number: 89953
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