GI1001 Datasheet, PDF (1/5 Pages) General Semiconductor – GLASS PASSIVATED FAST EFFICIENT RECTIFIER

VISHAY
Ultra Fast Sinterglass Diode
GI1001 to GI1004
Vishay Semiconductors
\
Features
• High temperature metallurgically bonded con-
struction
• Glass passivated cavity-free junction
• Superfast recovery time for high efficiency
• Low forward voltage, high current capability
• Hermetically sealed package
• High surge capability
Mechanical Data
Case: Sintered glass case, DO-204AP
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Parts Table
Part
GI1001
GI1002
GI1003
GI1004
V_RRM = 50 V
V_RRM = 100 V
V_RRM = 150 V
V_RRM = 200 V
Type differentiation
17031
Mounting Position: Any
Weight: 560 mg
DO-204AP ( G1)
DO-204AP ( G1)
DO-204AP ( G1)
DO-204AP ( G1)
Package
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Part Symbol Value Unit
Reverse voltage = Repetitive peak reverse see electrical characteristics
voltage
GI1001
V_R =
50
V
V_RRM
see electrical characteristics
GI1002
V_R =
100
V
V_RRM
see electrical characteristics
GI1003
V_R =
150
V
V_RRM
see electrical characteristics
GI1004
V_R =
200
V
V_RRM
Maximum average forward rectified current 0.375 " (9.5 mm) lead length at T_L = 75 °C
I_F(AV)
1.0
A
Peak forward surge current
8.3 ms single half sine-wave superimposed
on rated load (JEDEC Method), at T_L = 75 °C
I_FSM
30
A
Operating junction and storage temperature
range
T_J, - 55 to + °C
T_STG
175
Document Number 86073
Rev. 2, 28-Jan-03
www.vishay.com
1