GHR16_09 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Photoflash Rectifier

GHR16
Vishay General Semiconductor
Photoflash Rectifier
R-1
PRIMARY CHARACTERISTICS
I_F(AV)
0.5 A
V_RRM
1600 V
I_FSM
20 A
V_F
1.5 V
t_rr
300 ns
T_J max.
175 °C
FEATURES
• Glass passivated chip junction
• Fast switching for high efficiency
• Low leakage current
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high voltage rectification of photoflash
application.
MECHANICAL DATA
Case: R-1
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T_A = 55 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
V_RMS
V_DC
l_F(AV)
I_FSM
Maximum full load reverse current, full cycle average,
0.375" (9.5 mm) lead length at T_L = 55 °C
Operating junction and storage temperature range
I_R(AV)
T_J, T_STG
VALUE
1600
1120
1600
0.5
20
100
- 65 to + 175
UNIT
V
V
V
A
A
μA
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
Maximum instantaneous
forward voltage drop
0.5 A
V_F
1.5
Maximum DC reverse current
at rated DC blocking voltage
T_A = 25 °C
I_R
5.0
Maximum reverse
recovery time
I_F = 0.5 A, I_R = 1.0 A,
I_rr = 0.25 A
t_rr
300
Typical junction capacitance 4.0 V, 1 MHz
C_J
10
UNIT
V
μA
ns
pF
Document Number: 88618 For technical questions within your region, please contact one of the following:
Revision: 10-Nov-09
[e-mail], [e-mail], [e-mail]
www.vishay.com
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