GF1G-E3 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Surface Mount Glass Passivated Rectifier

GF1A thru GF1M
Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
®
Patented*
* Glass-plastic encapsulation
technique is covered by patent
DO-214BA (GF1)
No. 3,996,602, brazed-lead
assembly by Patent No. 3,930,306
and lead forming by Patent No. 5,151,846
MAJOR RATINGS AND CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
I_R
T_j max.
1.0 A
50 V to 1000 V
30 A
1.1 V, 1.2 V
5.0 µA
175 °C
FEATURES
• Superectifier structure for high reliability
condition
• Patented glass-plastic encapsulation technique
• Ideal for automated placement
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Meets MSL level 1, per J-STD-020C, LF max peak
of 250 °C
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of
power supplies, inverters, converters and free-
wheeling diodes for consumer, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214BA, molded epoxy over glass body
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL GF1A GF1B GF1D GF1G GF1J GF1K GF1M UNIT
Device marking code
GA GB GD GG GJ GK GM
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T_L = 125 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
50 100 200 400 600 800 1000 V
35
70 140 280 420 560 700
V
50 100 200 400 600 800 1000 V
1.0
A
30
A
Operating junction and storage temperature range
T_J, T_STG
- 65 to + 175
°C
Document Number 88617
26-Jun-06
www.vishay.com
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